专利摘要:

公开号:NL1035816A1
申请号:NL1035816
申请日:2008-08-12
公开日:2009-03-16
发明作者:Paul Petrus Joannes Berkvens;Roelof Frederik De Graaf;Paulus Martinus Maria Liebregts;Ronald Van Der Ham;Wilhelmus Franciscus Johannes Simons;Daniel Jozef Maria Direcks;Franciscus Johannes Joseph Janssen;Paul William Scholtes;Gert-Jan Gerardus Johannes Thomas Brands;Koen Steffens;Han Henricus Aldegonda Lempens;Mathieus Anna Karel Van Lierop;Christophe De Metsenaere;Marcio Alexandre Cano Miranda;Patrick Johannes Wilhelmus Spruytenburg;Joris Johan Anne-Marie Verstraete
申请人:Asml Netherlands Bv;
IPC主号:
专利说明:

LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
Field
The present invention relates to a lithographic apparatus and a method for manufacturing a device.
Background A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, maybe used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning" direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. The liquid is desirably distilled water, although one or more other liquids may be used. An embodiment of the present invention will be described with reference to liquid. However, fluids may also be suitable, particularly fluids with a higher refractive index than air, desirably a higher refractive index than water. The point of this is to enable imaging or narrower features since the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be seen as increasing the effective NA or the system and also increasing the depth of focus.) Other immersion liquids have been proposed, including water with solid particles (e.g. quartz) suspended therein.
However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, United States patent no. US 4,509,852) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
One of the solutions proposed for a liquid supply system IH to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in PCT patent application publication no. WO 99/49504. As illustrated in Figures 2 and 3, liquid is supplied by at least one inlet IN onto the substrate, desirably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system. That is, if the substrate is scanned beneath the element in a -X direction, liquid is supplied on the + X side of the element and tasks up on the -X side. Figure 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is tasks up on the other side of the element by outlet OUT which is connected to a low pressure source. In the illustration of Figure 2 the liquid is supplied along the direction of movement of the substrate relative to the final element, although this does not need to be the case. Various orientations and numbers of in-and-out positioned around the final element are possible, one example is illustrated in Figure 3 in which four sets of an inlet with an outlet on either side are provided in a regular pattern around the final element. A further immersion lithography solution with a localized liquid supply system IH is shown in Figure 4. Liquid is supplied by two groove inlets IN either side of the projection system PL, The liquid is removed by a variety of discrete outlets OUT arranged radially outwardly or the inlets IN. The inlets IN and OUT can be arranged in a plate with a hole in its center. Through the hole, the projection beam is projected. Liquid is supplied by one groove inlet IN on one side of the projection system PL. Liquid is removed by a variety of discrete outlets OUT on the other side of the projection system PL. This arrangement causes a flow of a thin film or liquid between the projection system PL and the substrate W. The choice of which combination of inlet IN and outlets OUT to use can depend on the direction of movement of the substrate W (the other combination of inlet IN and outlets OUT being inactive).
Another immersion lithography solution with a localized liquid supply system solution which has been proposed to provide the liquid supply system with a liquid confinement structure which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. Such a solution is illustrated in Figure 5. The liquid confinement structure IH is substantially stationary relative to the projection system in the XY plane although there may be some relative movement in the Z direction (in the direction of the optical axis). In an embodiment, a seal is formed between the liquid confinement structure and the surface of the substrate. The seal may be a contactless seal such as a gas seal.
The liquid confinement structure 12 at least partly contains liquid in the space 11 between a final element of the projection system PL and the substrate W. A contactless seal 16 to the substrate may be formed around the image field of the projection system so that is liquid confined within the space between the substrate surface and the final element of the projection system. The space is at least partly formed by the liquid confinement structure 12 positioned below and surrounding the final element of the projection system PL. Liquid is brought into the space below the projection system and within the liquid confinement structure 12 by liquid inlet 13. The liquid may be removed by liquid outlet 13. The liquid confinement structure 12 may extend a little above the final element of the projection system. The liquid level rises above the final element so that a buffer or liquid is provided. The liquid confinement structure 12 has an inner periphery that is at the upper end, in an embodiment, closely conforms to the shape of the projection system or the final element named and may, e.g., rounded. At the bottom, the inner periphery closely conform to the shape of the image field, e.g., rectangular although this need not be the case.
The liquid is contained in the space 11 by a gas seal 16 which, during use, is formed between the bottom of the liquid confinement structure 12 and the surface of the substrate W. The gas seal is formed by gas, eg air or synthetic air but, in an embodiment, N2 or another inert gas, provided under pressure via inlet 15 to the gap between liquid confinement structure 12 and substrate W. The gas is extracted via outlet 14. The overpressure on the gas inlet 15, vacuum level on the outlet 14 and geometry of the gap are arranged so that there is a high velocity gas flow inwards that confines the liquid. Those inlets / outlets may be annular grooves which surround the space 11. The flow of gas 16 is effective to contain the liquid in the space 11. Such a system is disclosed in United States patent application publication no. US 2004-0207824, hereby incorporated in its entirety by reference.
In European patent application publication no. EP 1420300 and United States patent application publication no. US 2004-0136494, each being incorporated into their complete by reference, the idea of a twin or dual stage immersion lithography apparatus is disclosed. Such an apparatus is provided with two tables for supporting a substrate. Leveling measurements are carried out with a table at a first position, without immersion liquid, and exposure is carried out with a table at a second position, where immersion liquid is present. Alternatively, the apparatus has only one table.
In European patent application publication no. EP 1494079, a liquid confinement system which comprises, in a single bottom surface or a barrier member with a liquid inlet. Radially outwardly is an extraction outlet for gas and liquid. In that liquid supply system the barrier member is at least partly supported by the substrate table through hydrostatic or hydrodynamic pressure or liquid exiting the inlet, i.e. the liquid inlet forms a liquid bearing. Figure 5 illustrates such a liquid confinement system.
European patent application publication no. EP 1420299 discloses an immersion lithographic apparatus in which the final element of the projection system can be maintained during, for example, substrate swap by use of a shutter member which can be attached to the liquid supply system and block it. In this way, the liquid can be prevented in the liquid supply system so that the final element of the projection system is maintained.
SUMMARY
It is desirable to provide an improved immersion lithographic apparatus. For example, it is desirable to provide an apparatus in which a barrier member can be combined with a shutter member so as to keep a final element of the projection system wet during substrate swap. According to an aspect of the invention, there is provided an immersion lithographic apparatus, including: a fluid confinement system configured to confine fluid to a space between a projection system and a substrate, the fluid confinement system including a fluid inlet to supply fluid, the fluid inlet connected to an inlet port and an outlet port; and a fluid supply system configured to control fluid flow through the fluid inlet by varying the flow rate or fluid provided to the inlet port and the flow rate or fluid removed from the outlet port.
According to an aspect of the invention, there is provided an immersion lithographic apparatus including: a liquid confinement system configured to confine liquid between a projection system and a substrate, the liquid confinement system including: a liquid supply inlet configured to direct a flow of liquid with a component towards the substrate and / or a substrate table configured to support a substrate, and an extraction outlet configured to extract therethrough liquid from the liquid supply inlet and / or gas from outside of the liquid confinement system, the extraction outlet being in a first surface of the liquid confinement system which is further from the substrate and / or a substrate table than a second surface in which the liquid supply inlet is located.
According to an aspect of the invention, there is provided an immersion lithographic apparatus including: a fluid confinement system for confining fluid between a final element of a projection system and a substrate, the fluid confinement system including: a fluid supply outlet for directing a flow or fluid with a component towards the substrate; and an extraction inlet for the extraction therethrough of fluid from the fluid supply outlet and / or gas from outside of the fluid confinement system, the extraction inlet is in a first surface of the fluid confinement system which is further from the substrate and / or a substrate table which is for supporting a substrate than a second surface in which the fluid supply outlet is positioned. According to an aspect of the invention, there is provided an immersion lithographic apparatus, comprising: a fluid confinement system configured to confine fluid to a space between a projection system and a localized area of the substrate; a shutter member positionable on an underside of the fluid confinement system opposite the projection system such that the fluid can be confined by the fluid confinement system; and a projection on a surface of the shutter member facing the fluid confinement system, a position of the projection, when adjacent the underside, corresponding to a fluid supply outlet in the underside, but not to an extraction inlet in the underside.
According to an aspect of the invention, there is an immersion lithographic apparatus including: a fluid confinement system configured to confine fluid to a space between a projection system and a substrate, the fluid confinement system including a conduit for a fluid flow, the fluid confinement system having: an outlet in the conduit configured to supply fluid to the space, the outlet being intermediate ends of the conduit; a flow restriction located in the outlet or downstream or the outlet in the conduit in the direction of flow or fluid; and a valve located in the conduit so that the valve is operable to control the rate of fluid flow though the outlet and so that fluid flows through the conduit continuously.
According to an aspect of the invention, there is provided a device manufacturing method including projecting a patterned beam of radiation through a fluid confined in a space using a fluid confinement system on a substrate, the fluid confinement system is at least partly borne by a flow of fluid out of a fluid supply inlet toward the substrate, and a fluid flow rate to the fluid supply inlet is regulated by the flow of fluid into an inlet port connected to the fluid supply inlet and the flow of fluid out of the fluid supply inlet via an outlet port also connected to the fluid supply inlet.
According to an aspect of the invention, there is provided a device manufacturing method including projecting a patterned beam of radiation through a liquid confined in a space using a liquid confinement system on a substrate, comprising the liquid confinement system comprising: a liquid supply inlet through which is a flow of liquid directed with a component towards the substrate and / or a substrate table configured to support a substrate; and an extraction outlet through which liquid from the liquid supply inlet and / or gas from outside of the liquid confinement system are extracted, the extraction outlet being in a first surface of the liquid confinement system which is further from the substrate and / or a substrate table, than a second surface in which the liquid supply inlet is located.
According to an aspect of the invention, there is provided a method of swapping a substrate for another under a fluid confinement system, the method including: relatively moving a first substrate from under the fluid confinement system and moving a shutter member under the fluid confinement system such a projection on the shutter member is in a position under at least a fluid supply inlet in the underside of the fluid confinement system but not an extraction outlet in the underside of the fluid confinement system; relatively moving the shutter member from under the fluid confinement system; and moving a second substrate under the fluid confinement system.
LETTER DESCRIPTION OF THE DRAWINGS
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: - Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; - Figures 2 and 3 depict a liquid supply system for use in a lithographic projection apparatus; - Figure 4 depicts a further liquid supply system for use in a lithographic projection apparatus; - Figure 5 depicts a further liquid supply system in which a seal and a bearing between the liquid supply system and the surface of the substrate is formed by a flow of liquid; - Figure 6 illustrates, in a cross-section, a liquid confinement system according to an embodiment of the present invention; and - Figure 7 illustrates, in cross-section, a liquid confinement system according to an embodiment of the present invention; - Figures 8 illustrates a liquid supply system according to an embodiment of the present invention; and - Figures 9 illustrates a liquid supply system according to an embodiment of the present invention; and - Figure 10 illustrates a shutter member according to an embodiment of the present invention in combination with a liquid confinement system.
DETAILED DESCRIPTION
Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or DUV radiation). a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C of the substrate W and supported by a frame RF.
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination of, for directing, shaping, or controlling radiation.
The support structure holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is a hero in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device"
The term "patterning device" used should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
The term "projection system" used should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" may also be considered as synonymous with the more general term "projection system".
As here depicted, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array or a type referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more support structures, e.g., a mask table). In such "multiple stage" machines the additional tables and / or support structures may be used in parallel, or preparatory steps may be carried out on one or more tables and / or support structures while one or more other tables and / or support structures are being used for exposure.
Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to be part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
The illuminator IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil plane or the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam B is an incident on the patterning device (e.g., mask) MA, which is a hero on the support structure (e.g., mask table) MT, and is patterned by the patterning device. Having traversed the patterning device MA, the radiation beam B passes through the projection system PS, which selects the beam onto a target portion C or the substrate W. With the aid of the second positioner PW and position sensor IF (eg an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, eg so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted) in Figure 1) can be used to accurately position the patterning device MA with respect to the path of the radiation beam B, eg after mechanical retrieval from a mask library, or during a scan. In general, movement of the support structure MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the support structure MT may be connected to a short-stroke actuator only, or may be fixed. Patterning device MA and substrate May be aligned using patterning device alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces, between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one that is provided on the patterning device MA, the patterning device alignment marks may be located between the dies.
The depicted apparatus could be used in at least one of the following modes: 1. In step mode, the support structure MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (ie a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern beamed to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion. 3. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern is imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array or a type as referred to above.
Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.
Figure 5 illustrates a liquid confinement system 4, IH which may be used with the liquid supply system and / or shutter member or an embodiment of the present invention. The liquid confinement system 4 or Figure 5 is described in the order to give an understanding of some of the problems that may be overcome by an embodiment of the present invention. A liquid fills a space 2 between a final element of the projection system PL and the substrate W. A liquid confinement system 4 (which is sometimes called a seal member or a barrier member) is arranged between the final element of the projection system PL and the surface of the substrate W. It defines a space 2 with inner side walls. A liquid seal is formed between the seal member 4 and the surface of the substrate W. This prevents leakage of liquid from the space 2.
The liquid confinement member 4 has a liquid supply inlet 6 and a liquid outlet 8. The inlet 6 and outlet 8 are in the surface of the liquid confinement member 4 which faces the substrate (hereinafter referred to as the primary surface). The outlet 8 is located radially inwardly of the inlet 6 with respect to the optical axis of the projection system PL. In an embodiment, the inlet 6 may be located radially inwardly from the outlet 8. A liquid seal is formed by the flow or liquid from the inlet 6 to the outlet 8.
The liquid confinement system 4 may be at least partly supported by a hydrostatic / hydrodynamic bearing defined by the liquid between the liquid confinement system 4 and the substrate W. This hydrostatic / hydrodynamic bearing can then at least be partly supported by the liquid confinement system 4 as well as providing a liquid seal to prevent leakage of the liquid from the space 2. Otherwise or additionally, the liquid confinement system may be supported by one or more springs or actuators 14.
An extraction outlet 10 is also formed in the primary surface of the liquid confinement system 4. The extraction outlet 10 is outwards in a radial direction from the inlet 6 with respect to the optical axis. The extraction outlet 10 is arranged to extract any liquid which may escape from the seal into the area of the substrate W not immersed in liquid.
An additional liquid inlet 12 is formed in the space 2. This additional liquid inlet 12 is used to supply liquid into the space 2.
Figure 5 depicts the liquid confinement system in cross-section. It will be appreciated that the inlets 6 and 12 and the outlets 8 and 10 can extend continuously around liquid filled space 2.
Thus, the inlets 6 and 12 and outlets 8 and 10 may form a groove when viewed from the surface of the substrate. This groove can be annular, rectangular or polygonal. Alternatively, the inlets and outlets can be provided at discrete locations in a groove. The groove may be continuous or discontinuous and may optionally not extend continuously around the space. A horizontal member 16 connects the liquid confinement system 4 to the sides or a reference frame RF. This member provides support for the liquid confinement system 4 in addition to the liquid bearing and also ensures that the correct horizontal position has been maintained. It keeps the liquid confinement system 4 substantially stationary with respect to the projection system PL. the horizontal, xy plane. The member 16 allows relative movement in the vertical, z, direction and tilt in the vertical plane.
Optionally, one or more adjustable passive (or active) springs or actuators 14 can be used to apply a biasing force to the liquid confinement system 4 in the direction of the substrate W. This biasing force allows the operating pressure of the hydrostatic / hydrodynamic bearing to be changed without needing to change the dimensions of the bearing.
The force exerted by the hydrostatic / hydrodynamic bearing (and any force applied by the spring (s) or actuator (s) 14) should match the force exerted downwards due to gravity on the liquid confinement system 4. The force is equal to the pressure multiplied by effective surface area about which the bearing acts.
There may be one or more difficulties associated with using the liquid confinement system or Figure 5 with a shutter member. A shutter member can be seen as being a member which is placed in the same position as the substrate W so that liquid in the space 2 does not flow out of the liquid confinement system. The shutter member 20 maybe independently moveable or the substrate table WT or can be part of the substrate table WT. A convenient way of attaching the shutter member is to use the extraction outlet 10 to create an attractive force between the liquid confinement system 4 and the shutter member. The shutter member comes in contact with the primary surface of the liquid confinement system 4. The flow of liquid in and out of the inlets and outlets 6, 8 is stopped or reduced. In that way the shutter member comes in contact with the primary surface of the liquid confinement system 4. A difficulty of this system is that the liquid standing in the liquid confinement system may collect contaminants. Also or additionally, the temperature of the liquid confinement system 4 can vary because of a change in flow rate or liquid through it. One or more of these problems may be addressed by the fluid control system, shutter member and liquid confinement system or an embodiment of the present invention described below with reference to Figures 6-10. The verses of Figures 6-10 may have an advantage in common, namely the reduction in defects in the imaged product. This is accomplished by having liquid flow substantially continuously in the liquid confinement system 4. That is stationary liquid in the liquid confinement system is, at least to a large extent, avoided.
Figure 6 and 7 show, in cross-section, one half or a liquid confinement system 4 according to an embodiment of the present invention. In the liquid confinement system of Figures 6 and 7, the projection system PL would be situated on the left hand side as illustrated. On the primary surface, which is the bottom or under surface of the liquid confinement system 4, there is positioned a liquid supply inlet 6. The liquid supply inlet 6 is the radially most inward component on the under surface of the liquid confinement system. The liquid entering the liquid supply inlet 6 is greater than atmospheric pressure typically at about 0.5 bar gauge.
Radially outwardly of the liquid supply inlet 6 is an extraction outlet 10. The extraction outlet 10 causes a radially inward flow of gas from outside of the liquid confinement system 4 (indicated by arrow 11). That flow of gas is effective to seal liquid which moves radially outwardly from the liquid supply inlet 6 so that most, if not all, such liquid is extracted through outlet 10.
In this embodiment no liquid outlet is illustrated in the underside although such a component may be present. For example, a single phase liquid extractor may be present such as the one disclosed in United States patent application publication no. US 2006-0038968. Any number of components may be present on the bottom surface. There may be no active components radially outwardly or the extractor outlet 10 (for example there may be a gas knife radially outwardly or the extractor outlet 10, or any such gas knife may be turned off).
As illustrated in Figure 6, a shutter member 20 is in the attached position. In the attached position the shutter member 20 is in contact with the primary or undersurface of the liquid confinement system 4. In this position no liquid flows out of the inlet 6, but the flow of gas through the extraction outlet 10 is maintained. This creates an under pressure between the liquid confinement system 4 and the shutter member 20 so that the shutter member 20 is attracted to the bottom of the liquid confinement system 4 and written attached. A flow of liquid through the liquid confinement system 4 can be maintained as described below with reference to Figures 8 and 9.
If the height of the liquid confinement system 4 about an object, such as the substrate table, substrate or shutter member, becomes very small it is hard to predict the capillary force which can get very high. Generally the strength of the capillary force is inversely proportional to the height. If the height is low (say 0-1 0pm) large force differences can occur. The design height is the average distance of the bottom of the liquid confinement system over the object. For example, the topography of the substrate can vary by ± 50μιη from a nominal level. If the design height is about ημηι, the differences in force are much lower because the distance will be between 50 and 150 μιη. Because an embodiment of the present invention results in better control of the height of the liquid confinement system, the generation of unpredictable capillary forces may be avoided. The height of the liquid confinement system can be chosen such that any contaminant particles in the liquid can pass between the liquid confinement system and the object (e.g., substrate, substrate table or shutter member) with out scratching the object. Thus the height can be controlled to be at least the largest dimension of any expected contaminant particle.
Furthermore, improved control over the height of the liquid confinement system 4 may be achieved by the step 31 in the undersurface of the liquid confinement system 4. This helps to ensure that a first surface 32 in which the extraction outlet 10 is formed is further from the applicable object (eg, the substrate table and / or the shutter member 20) than a second surface 33 through which surface 33 the liquid supply inlet 6 passes. The difference in height may be less than 1 mm and desirably less than 0.4 mm. The difference in height maybe between 10 and 50 pm, desirably between about 25 and 35 pm, desirably about 30 pm. The benefit of this arrangement will be discussed below. It results in a balance of the repulsive force generated by flow or liquid out of the liquid supply inlet 6 and the attractive force generated by the extraction outlet 10 being connected to an under pressure. Typically the difference in height between the first surface 32 and second surface 33 can be expressed as a ratio. For example, the first surface is usually between 1/10 and 3 times further from the object than the second surface.
The hydrostatic / hydrodynamic bearing can support as much as 10% (or in certain circumstances more) or the weight of the liquid confinement system. The rest of the weight of the liquid confinement system may be tasks by one or more springs or actuators 14. When the shutter member is attached, all the weight of the liquid confinement system may be tasks by the one or more springs or actuators 14 A hydrostatic / hydrodynamic bearing is achieved by the presence of liquid from the liquid supply inlet 6 being between the liquid confinement system 4 and the substrate W, substrate table WT or shutter member 20 as appropriate. The flow of liquid out of the liquid supply inlet 6 generates a repulsive force between those two objects whereas the flow of liquid and gas into the extraction outlet 10 generates an attractive force. If a gas knife was present this would provide further repulsive force. That might help in avoiding crash situations in which the liquid confinement system 4 is pulled towards the shutter member 20 or substrate W or substrate table WT, and / or vice versa. That can cause an undesirable and uncontrolled crash between those two objects or bring the objects close enough together such that particles between the objects scratch one or both objects.
However, when no gas knife is present or the gas knife is inactive, as the liquid confinement system 4 comes closer to the applicable object (and / or when the applicable object comes closer to the liquid confinement system 4), both the repulsive force and the attractive forces will increase. By ensuring that the first surface 32 is further from that object than the second surface 33, this will help ensure that the repulsive force will increase faster than the attractive force, helping to prevent collision between the liquid confinement system 4 and the object. Even greater control can be achieved by varying the flow or liquid out of the liquid supply inlet 6 as described below.
Of course the outlet 10 in the first surface 32 can have rounded edges in the form of an arc or an arbitrary curved profile such as described in relation to the third edition of European patent application publication no. EP 1494079. What is desirable is the surface through which the outlet 10 extends is further away from the substrate W, substrate table WT or shutter member 20 as appropriate than the surface through which the inlet 6 extends.
Figure 7 illustrates a further embodiment which is the same as illustrated in Figure 6 except that instead of being formed in the primary surface of the liquid confinement system 4, a groove 35 is formed. In effect this means that the first surface 32 is an upper wall of a recess in the undersurface of the liquid confinement system 4. In this edition the under pressure generated by the outlet 10 is the same. However, the under pressure is applied over a larger area than if the outlet 10 were in a surface which is at the same level as the second surface 33. Thus, the force is larger and the object can be clamped with a higher force.
As illustrated in Figures 6 and 7, the liquid supply inlet 6 and extraction outlet 10 are connected via chambers 40, 50 respectively to a liquid supply and an under pressure source respectively. These chambers are effective to even out pressure fluctuations. It will be appreciated that the chamber 40 (or 50) can be made so small that the various conduits simply join together.
With respect to the chamber 40 is a liquid chamber outlet 42 which leaves the chamber via a conduit that is connected to the liquid supply inlet 6. The chamber 40 also has an inlet port 44 which leaves via a conduit 45 to a liquid supply as well as an outlet port 46 which leaves via a conduit 47 to a drain or a low pressure source. The liquid can optionally be recycled. Such recycling may involve filtration or contaminant particles. A controller may be provided to control extraction through the outlet (s) 8, 10. The controller may control one or more valves. The controller may also control liquid flow through the inlet (s) 6, 12. The controller may also control extraction through the outlet and liquid flow through the inlet at a level such that, in use, combined with the geometry of the underside of the liquid confinement system, a repulsive force between the liquid confinement system and the applicable object has been generated. This repulsive force is generated by ensuring that the liquid flow through the inlet produces a force which is greater than the attractive force between the liquid confinement system and the object that is generated by the outlet through the outlet. This may be arranged such that it is true irrespective of the height of the liquid confinement system over the object.
Figures 8 and 9 show a liquid supply system to control liquid flow out of the liquid chamber outlet 42 and different out of the liquid supply inlet 6 (which acts as a flow restriction). This is achieved by a first valve 60 connected between the outlet port 46 and a drain. In normal operation during, for example, scanning when the liquid confinement system 4 is borne by liquid exiting the inlet 6, the first valve 60 is at least partly closed. When liquid is no longer required to flow out of the inlet 6, for example during clamping or a shutter member 20 to the underside of the liquid confinement system 4, the first valve 60 is left at least partially open. Thus, a flow of liquid through the liquid confinement system 4 can be maintained while flow through the inlet 6 is turned off. The outlet port 46 is not a fluid inlet to provide liquid to the space; the outlet port 46 is configured to remove liquid from the liquid confinement system 4. The inlet port 44 is configured to be connected to a liquid supply.
This results in being less liquid standing in the liquid confinement system, for example during substrate swap, possibly reducing the risk of particle contamination. Furthermore, having a flow of liquid through the liquid confinement system 4 helps to ensure that it maintains a substantially constant temperature (e.g., there is a substantially constant rate of heat transfer from the liquid confinement system 4 to the liquid). The first valve 60 can be continuously variable or can have two or three or more positions. This allows the flow rate or liquid out of the inlet 6 to be varied, varying the bearing strength.
During, for example, release of the shutter member 20, the first valve 60 can also be temporarily closed to help generate a releasing force. The first valve 60 can also be closed in an emergency.
This ensures maximum repelling force between the liquid confinement system 4 and the object on which the liquid confinement system 4 is supported (or the object held). This helps to repel the object away from the liquid confinement system 4. This may be achieved by a maximum flow rate or liquid out of the inlet 6. Thereafter the first valve 60 may be opened to prevent flooding of the apparatus.
Thus, as can be seen, the liquid confinement system 4 and the liquid supply system may also result in a faster and safer attachment / release of the shutter member 20.
It is also possible to provide a second valve 70 between the liquid supply and the inlet port 44. Generally this valve will be open separately from during installation. Further, a third valve 80 may be provided between the inlet port 44 and a drain. This valve is generally kept closed except in an emergency when it is opened after the first valve 60 is closed. Thus, a repulsive force pulse can be generated between the liquid confinement system 4 and the object which is below it if they get too close together. Thus scratching can be avoided as well as collision and then liquid can flow into the drain to prevent flooding of the apparatus. Whether course there may be other ways or operating the system and in particular it may not be necessary to have both first and second valves 60, 70. Furthermore, third valve 80 is an optional feature. A control system can be provided for controlling all three valves 60, 70, 80 in the manner described above.
As will be appreciated, this liquid supply system can be used with other arrangements of liquid confinement systems other than those illustrated in Figures 6 and 7. The liquid supply system is particularly suitable for use with liquid borne confinement systems but it can also be used with other forms of liquid confinement system. A liquid borne confinement system is one in which at least part of the weight of the confinement system is supported by a layer of liquid. The liquid supply system can be used for liquid supply inlet 6 or all liquid supply inlets or only some liquid supply inlets or the liquid confinement system. A separate liquid supply system can be used to fill the space 2 with liquid, if necessary.
Figure 9 illustrates a further embodiment of a liquid supply system. This embodiment is the same as that of Figure 10 except that a by-pass conduit 90 is provided in parallel to the first valve 60. The by-pass 90 is provided with a flow restriction. The by-pass 90 is always open. Thus, there is always a flow or liquid through the by-pass 90 even when the first valvel 60 is closed. In this way there will be a reduced amount or no stationary liquid in the system. Also any pressure variation as a result of opening or closing valve 60 may be reduced.
Of course the first and second valves 60.70 are illustrated and described as being downstream and upstream or the outlet port 46 and inlet port 44 respectively. However, it is possible for the first valve 60 to be positioned upstream of the outlet port 46. It is also possible for the second valve to be positioned downstream of the inlet port 44. Indeed, it may be difficult to identify an inlet port or an outlet port and another way of viewing the system is as follows. A conduit is provided for fluid flow. The conduit is connected, for example by a chamber outlet 42, to an inlet for supplying liquid to the space. That chamber outlet 42 may contain a flow restriction. Additionally or alternatively there may be a flow restriction downstream or the connection to the inlet in the conduit. At least one valve is located in the conduit. The valve is operable to control the rate of fluid flow through to the inlet 6. The valve may also ensure that fluid flows through the conduit continuously. The valve may be positioned upstream or downstream or the connection to the inlet 6.
Thus in an embodiment, when the valve is open, substantially all the flow of fluid flows through the valve, and when the valve is closed, all the flow of fluid flows through the inlet, and may flow through the chamber outlet 42. Advantageously , the fluid flow through the liquid confinement system is continuous. Desirably the outlet (which is connected to the inlet 6) may be intermediate the ends of the conduit.
Figure 10 illustrates a liquid confinement system 4 which is similar to that in Figures 6 and 7 except that the liquid supply inlet 6 and extraction outlet 10 are formed in a single surface so that they are in a surface which is the same height from a substrate . The liquid confinement system 4 is shown with a shutter member 20 attached. However, a similar effect can be achieved as provided by the step 31 in the liquid confinement system of Figures 6 or 7 by providing a protrusion 70 on a top surface of the shutter member 20. The protrusion 70 need only protrude at a position under the liquid supply inlet 6 and therefore could be annular though in Figure 10 it is shown as being circular. The protrusion can be provided on the shutter member 20 in the form of a sticker or it can be formed out of the shutter member (or machined) or glued thereon. The effect of the protrusion is to increase the area of the shutter member 20 exposed to the under pressure of the extraction outlet. As in the count of Figures 6 and 7, this results in a greater attractive force.
The shutter member 20 or Figure 10 can also be used with the liquid confinement system 4 or Figure 5 or 6 or 7.
Although the invention has been described above in relation to the use of an immersion liquid, actually the liquid can be a non-liquid fluid.
Although specific reference maybe made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms "wafer" or "die "may be considered as synonymous with the more general terms" substrate "or" target portion ", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or an inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so the term substrate used may also refer to a substrate that already contains multiple processed layers.
The terms "radiation" and "beam" used include and compass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength or about 365, 248, 193.157 or 126 nm).
The term "lens", where the context allows, may refer to any one or combination of various types of optical components, including refractive and reflective optical components.
While specific expired or the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of one or more computer programs containing one or more sequences of machine-readable instructions describing a method as disclosed above, or one or more data storage media (eg semiconductor memory, magnetic or optical disk) having such one or more computer programs stored therein. In particular, at least one controller can be provided to control at least a component of the apparatus.
One or more of the invention may be applied to any immersion lithography apparatus, in particular, but not exclusively, those types mentioned above and whether the immersion liquid is provided in the form of a bath, only on a localized surface area of the substrate , or is unconfined. In an unconfined arrangement, the immersion liquid may flow over the surface of the substrate and / or substrate table so that substantially the entire uncovered surface of the substrate table and / or substrate is legaled. In such an unconfined immersion system, the liquid supply system may not confine the immersion fluid or it may provide a proportion or immersion liquid confinement, but not substantially complete confinement or the immersion liquid, i.e. a leaky confinement immersion system. A liquid supply system as contemplated, should be broadly constructed. In certain circumstances, it may be a mechanism or combination of structures that provides a liquid to a space between the projection system and the substrate and / or substrate table. It may include a combination of one or more structures, one or more liquid inlets, one or more gas inlets, one or more gas outlets, and / or one or more liquid outlets that provide liquid to the space. In an edition, a surface of the space may be a portion of the substrate and / or substrate table, or a surface of the space may completely cover a surface of the substrate and / or substrate table, or the space may envelope the substrate and / or substrate table. The liquid supply system may optionally further include one or more elements to control the position, quantity, quality, shape, flow rate or any other features of the liquid.
The immersion liquid used in the apparatus may have different compositions, according to the desired properties and the wavelength of exposure radiation used. For an exposure wavelength of 193nm, ultra pure water or water-based compositions may be used and for this reason the immersion liquid is sometimes referred to as water and water-related terms such as hydrophilic, hydrophobic, humidity, etc. may be used. However, it is intended that such terms should also extend to other high refractive index liquids which may be used, such as fluorine containing hydrocarbons.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope or the clauses set out below.
Other aspects of the invention are set out as in the following numbered clauses: 1. An immersion lithographic apparatus, including: a fluid confinement system configured to confine fluid to a space between a projection system and a substrate, the fluid confinement system including a fluid inlet configured to supply fluid, the fluid inlet connected to an inlet port and an outlet port; and a fluid supply system configured to control fluid flow through the fluid inlet by varying the flow rate or fluid provided to the inlet port and the flow rate or fluid removed from the outlet port. 2. The immersion lithographic apparatus or clause 1, the fluid inlet leads to a fluid supply inlet in an underside of the fluid confinement system. 3. The immersion lithographic apparatus or clause 1, the fluid supply system comprises a valve configured to vary a cross-sectional area or a conduit leading from the outlet port or a conduit bringing the fluid inlet and outlet port into fluid communication. 4. The immersion lithographic apparatus or clause 3, further including, in parallel to the first valve, a by-pass conduit including a flow restrictor. 5. The immersion lithographic apparatus of clause 1, the fluid supply system comprises a valve configured to vary a cross-sectional area or a conduit connected between a fluid source and the inlet port or a conduit bringing the fluid inlet and inlet port into fluid communication. 6. The immersion lithographic apparatus of clause 1, the fluid supply system comprises a valve configured to vary a cross-sectional area or a conduit which places the inlet port in fluid communication with a drain. 7. The immersion lithographic apparatus of clause 1, further including a controller configured to control a valve associated with the fluid supply system, the controller configured to vary the flow of fluid through the inlet and outlet ports to change the flow rate of fluid through the fluid inlet. 8. The immersion lithographic apparatus or clause 7, where the controller is configured to maintain the flow rate or fluid as substantially constant. 9. The immersion lithographic apparatus or clause 1, the fluid supply system is configured to vary the flow rate or fluid provided to the inlet port and the flow rate or fluid removed from the outlet port using a single valve. 10. The immersion lithographic apparatus or clause 9, where the single valve is positioned upstream or downstream or the inlet port or upstream or downstream or the outlet port. 11. An immersion lithographic apparatus including: a fluid confinement system configured to confine fluid between a projection system and a substrate, the fluid confinement system comprising: a fluid supply inlet configured to directly a flow of fluid with a component towards the substrate and / or a substrate table configured to support a substrate, and an extraction outlet to extract therethrough fluid from the fluid supply inlet and / or gas from outside of the fluid confinement system, the extraction outlet being in a first surface of the fluid confinement system which is further from the substrate and / or a substrate table than a second surface in which the fluid supply inlet is located. 12. The immersion lithographic apparatus or clause 11, being the first and / or second surface (s) is / are substantially flat. 13. The immersion lithographic apparatus of clause 11, the first and / or second surface (s) is substantially parallel to a top surface of the substrate and / or substrate table. 14. The immersion lithographic apparatus of clause 11, in use, the first surface is about 1/10 to 3 times further from the substrate and / or substrate table than the second surface. 15. The immersion lithographic apparatus or clause 11, the extraction outlet is the most radially outward active component in the underside of the fluid confinement system, relative to an optical axis or the projection system. 16. The immersion lithographic apparatus of clause 11, in which the first surface extends to a plan edge of the fluid confinement system. 17. The immersion lithographic apparatus or clause 11, the first surface is an upper wall or a recess in the undersurface of the fluid confinement system. 18. The immersion lithographic apparatus of clause 11, further including a controller configured to control extraction through the extraction outlet and fluid flow through the fluid supply inlet at a level such that, in use, combined with the geometry of the underside of the fluid confinement system, a repulsive force between the fluid confinement system and the substrate and / or substrate table generated by fluid flow through the fluid inlet is greater than an attractive force between the fluid confinement system and the substrate and / or substrate table generated by flow through the extraction outlet, irrespective of the displacement between the fluid confinement system and the substrate and / or substrate table. 19. An immersion lithographic apparatus, comprising: a fluid confinement system configured to confine fluid to a space between a projection system and a localized area of the substrate; a shutter member positionable on an underside of the fluid confinement system opposite the projection system such that the fluid can be confined by the fluid confinement system; and a projection on a surface of the shutter member facing the fluid confinement system, a position of the projection, when adjacent the underside, corresponding to a fluid supply outlet in the underside, but not to an extraction inlet in the underside. 20. The immersion lithographic apparatus or clause 19, the shutter member is in the form of a disc and is separable from the remainder of the apparatus. 21. An immersion lithographic apparatus including: a fluid confinement system configured to confine fluid to a space between a projection system and a substrate, the fluid confinement system including a conduit for a fluid flow, the fluid confinement system having: an outlet in the conduit configured to supply fluid to the space, the outlet being intermediate ends of the conduit; a flow restriction located in the outlet or downstream or the outlet in the direction of flow or fluid; and a valve located in the conduit so that the valve is operable to control the rate of fluid flow though the outlet and so that fluid flows through the conduit continuously. 22. A device manufacturing method comprising projecting a patterned beam of radiation through a fluid confined in a space using a fluid confinement system onto a substrate, the fluid confinement system is at least partly borne by a flow or fluid out of a fluid supply inlet toward the substrate, and a fluid flow rate to the fluid supply inlet is regulated by the flow of fluid into an inlet port connected to the fluid supply inlet and the flow of fluid out of the fluid supply inlet through an outlet port also connected to the fluid supply inlet. 23. A device manufacturing method comprising projecting a patterned beam of radiation through a fluid confined in a space using a fluid confinement system onto a substrate, containing the fluid confinement system comprising: a fluid supply inlet through which a flow of fluid is directed with a component towards the substrate and / or a substrate table configured to support a substrate; and an extraction outlet through which fluid from the fluid supply inlet and / or gas from outside of the fluid confinement system are extracted, the extraction outlet being in a first surface of the fluid confinement system which is further from the substrate and / or a substrate table, than a second surface in which the fluid supply inlet is located. 24. A method of swapping a substrate for another under a fluid confinement system, the method including: relatively moving a first substrate from under the fluid confinement system and moving a shutter member under the fluid confinement system such that is a projection on the shutter member in a position under at least a fluid supply inlet in the underside of the fluid confinement system but not an extraction outlet in the underside of the fluid confinement system; relatively moving the shutter member from under the fluid confinement system; and moving a second substrate under the fluid confinement system.
权利要求:
Claims (1)
[1]
An immersion lithography apparatus, characterized in that the immersion lithography apparatus comprises: a fluid containment system configured to enclose fluid in a space between a projection system and a substrate, the fluid containment system having a fluid inlet configured to supply fluid, the fluid inlet being coupled to an inlet port and an outlet port; and a fluid supply system configured to control fluid flow through the fluid inlet by varying the flow rate of fluid supplied to the inlet port and the flow rate of fluid discharged from the outlet port.
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公开号 | 公开日
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引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题

US4509852A|1980-10-06|1985-04-09|Werner Tabarelli|Apparatus for the photolithographic manufacture of integrated circuit elements|
JP2753930B2|1992-11-27|1998-05-20|キヤノン株式会社|Immersion type projection exposure equipment|
WO1999049504A1|1998-03-26|1999-09-30|Nikon Corporation|Projection exposure method and system|
FR2832824A1|2001-11-28|2003-05-30|St Microelectronics Sa|Integrated circuit card operation blocking method e.g. for smart card, involves executing blocking program including sequence of instructions to proceed with loop operation of blocking program, when jump table is generated|
US6788477B2|2002-10-22|2004-09-07|Taiwan Semiconductor Manufacturing Co., Ltd.|Apparatus for method for immersion lithography|
JP3977324B2|2002-11-12|2007-09-19|エーエスエムエルネザーランズビー.ブイ.|Lithographic apparatus|
EP1429188B1|2002-11-12|2013-06-19|ASML Netherlands B.V.|Lithographic projection apparatus|
JP3953460B2|2002-11-12|2007-08-08|エーエスエムエルネザーランズビー.ブイ.|Lithographic projection apparatus|
DE60335595D1|2002-11-12|2011-02-17|Asml Netherlands Bv|Immersion lithographic apparatus and method of making a device|
US7110081B2|2002-11-12|2006-09-19|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
EP2495613B1|2002-11-12|2013-07-31|ASML Netherlands B.V.|Lithographic apparatus|
EP1420300B1|2002-11-12|2015-07-29|ASML Netherlands B.V.|Lithographic apparatus and device manufacturing method|
EP1420299B1|2002-11-12|2011-01-05|ASML Netherlands B.V.|Immersion lithographic apparatus and device manufacturing method|
US7213963B2|2003-06-09|2007-05-08|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
SG121822A1|2002-11-12|2006-05-26|Asml Netherlands Bv|Lithographic apparatus and device manufacturing method|
JP4362867B2|2002-12-10|2009-11-11|株式会社ニコン|Exposure apparatus and device manufacturing method|
TWI295414B|2003-05-13|2008-04-01|Asml Netherlands Bv|Lithographic apparatus and device manufacturing method|
DE10324477A1|2003-05-30|2004-12-30|Carl Zeiss Smt Ag|Microlithographic projection exposure system|
US6867844B2|2003-06-19|2005-03-15|Asml Holding N.V.|Immersion photolithography system and method using microchannel nozzles|
EP1494079B1|2003-06-27|2008-01-02|ASML Netherlands B.V.|Lithographic Apparatus|
EP1498778A1|2003-06-27|2005-01-19|ASML Netherlands B.V.|Lithographic apparatus and device manufacturing method|
EP2264531B1|2003-07-09|2013-01-16|Nikon Corporation|Exposure apparatus and device manufacturing method|
US7779781B2|2003-07-31|2010-08-24|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
TWI263859B|2003-08-29|2006-10-11|Asml Netherlands Bv|Lithographic apparatus and device manufacturing method|
EP1659620A4|2003-08-29|2008-01-30|Nikon Corp|Liquid recovery apparatus, exposure apparatus, exposure method, and device production method|
EP2960702B1|2003-09-03|2017-02-22|Nikon Corporation|Apparatus and method for providing fluid for immersion lithography|
CN100394244C|2003-09-03|2008-06-11|株式会社尼康|Apparatus and method for providing fluid for immersion lithography|
WO2005029559A1|2003-09-19|2005-03-31|Nikon Corporation|Exposure apparatus and device producing method|
JP2005136374A|2003-10-06|2005-05-26|Matsushita Electric Ind Co Ltd|Semiconductor manufacturing apparatus and pattern formation method using the same|
KR101332543B1|2003-10-22|2013-11-25|가부시키가이샤 니콘|Exposure apparatus, exposure method, and method for manufacturing device|
US7411653B2|2003-10-28|2008-08-12|Asml Netherlands B.V.|Lithographic apparatus|
JP2005191393A|2003-12-26|2005-07-14|Canon Inc|Exposing method and equipment|
JP4371822B2|2004-01-06|2009-11-25|キヤノン株式会社|Exposure equipment|
WO2005071717A1|2004-01-26|2005-08-04|Nikon Corporation|Exposure apparatus and device producing method|
JP2005243686A|2004-02-24|2005-09-08|Ebara Corp|Exposure device and exposure method|
KR101162938B1|2004-04-19|2012-07-05|가부시키가이샤 니콘|Exposure apparatus and device producing method|
JP5130609B2|2004-06-10|2013-01-30|株式会社ニコン|Exposure apparatus, exposure method, and device manufacturing method|
CN100547730C|2004-06-10|2009-10-07|尼康股份有限公司|Exposure device and manufacturing method|
KR101310472B1|2004-06-10|2013-09-24|가부시키가이샤 니콘 엔지니어링|Exposure equipment, exposure method and device manufacturing method|
JP4515335B2|2004-06-10|2010-07-28|株式会社ニコン|Exposure apparatus, nozzle member, and device manufacturing method|
US7501226B2|2004-06-23|2009-03-10|Taiwan Semiconductor Manufacturing Co., Ltd.|Immersion lithography system with wafer sealing mechanisms|
US7701550B2|2004-08-19|2010-04-20|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
JP3977364B2|2004-09-03|2007-09-19|キヤノン株式会社|Exposure apparatus and device manufacturing method|
US7379155B2|2004-10-18|2008-05-27|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
EP3079164A1|2005-01-31|2016-10-12|Nikon Corporation|Exposure apparatus and method for producing device|
US8018573B2|2005-02-22|2011-09-13|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
JP4072543B2|2005-03-18|2008-04-09|キヤノン株式会社|Immersion exposure apparatus and device manufacturing method|
US7411654B2|2005-04-05|2008-08-12|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
US7474379B2|2005-06-28|2009-01-06|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
US7411658B2|2005-10-06|2008-08-12|Asml Netherlands B.V.|Lithographic apparatus and device manufacturing method|
JP2007115758A|2005-10-18|2007-05-10|Nikon Corp|Exposure method and exposure apparatus|
US7656501B2|2005-11-16|2010-02-02|Asml Netherlands B.V.|Lithographic apparatus|
US7773195B2|2005-11-29|2010-08-10|Asml Holding N.V.|System and method to increase surface tension and contact angle in immersion lithography|
JP2007184336A|2006-01-05|2007-07-19|Canon Inc|Exposure apparatus and method for manufacturing device|
CN101460893B|2006-06-08|2012-05-30|松下电器产业株式会社|Image display device|
CN100541713C|2006-07-18|2009-09-16|东京毅力科创株式会社|Circulation system for high refractive index liquid, pattern form device and pattern formation method|JP5016705B2|2009-06-09|2012-09-05|エーエスエムエルネザーランズビー.ブイ.|Fluid handling structure|
NL2005586A|2009-12-02|2011-06-06|Asml Netherlands Bv|Lithographic apparatus and sealing device for a lithographic apparatus.|
NL2009378A|2011-10-07|2013-04-09|Asml Netherlands Bv|Lithographic apparatus and method of cooling a component in a lithographic apparatus.|
NL2009472A|2011-10-24|2013-04-25|Asml Netherlands Bv|A fluid handling structure, a lithographic apparatus and a device manufacturing method.|
JP6132072B2|2014-06-12|2017-05-24|富士電機株式会社|Impurity adding apparatus, impurity adding method, and semiconductor device manufacturing method|
DE112017003187T5|2016-06-27|2019-03-14|Advanced Research For Manufacturing Systems, Llc|Mold manufacturing process, non-transitory computer-readable storage medium and controller|
法律状态:
2009-05-06| AD1A| A request for search or an international type search has been filed|
优先权:
申请号 | 申请日 | 专利标题
US11/898,637|US8681308B2|2007-09-13|2007-09-13|Lithographic apparatus and device manufacturing method|
US89863707|2007-09-13|
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